principle of energy storage in ferroelectric thin films
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[PDF] Strain engineering of dischargeable energy density of ferroelectric thin-film …
DOI: 10.1016/j.nanoen.2020.104665 Corpus ID: 216337702 Strain engineering of dischargeable energy density of ferroelectric thin-film capacitors @article{Wang2020StrainEO, title={Strain engineering of dischargeable energy density of ferroelectric thin-film capacitors}, author={Jianjun Wang and Yuanjie Su and Bo Wang …
Superior energy storage performance, and fatigue resistance in ferroelectric BCZT thin films …
Optimal energy-storage properties were obtained for 0.96BNT-0.04BT-Fe2 thin films, with a breakdown strength, energy-storage density and efficiency of 2500 kV/cm, 33 J/cm³, 67.8%, respectively.
Experimental evidence of breakdown strength and its effect on energy-storage performance in normal and relaxor ferroelectric films …
Normal-ferroelectric Pb(Zr 0.52 Ti 0.48)O 3 (PZT) and relaxor-ferroelectric Pb 0.9 La 0.1 (Zr 0.52 Ti 0.48)O 3 (PLZT) thin-films are deposited on SrRuO 3-covered SrTiO 3 /Si substrates. An ultrahigh recoverable energy-storage density (U reco) of 68.2 J/cm 3 and energy efficiency (η) of 80.4% are achieved in the PLZT thin-films under a …
Significant enhancement of energy-storage performance of (Pb0.91La0.09)(Zr0.65Ti0.35)O3 relaxor ferroelectric thin films …
1.5-μm-thick (Pb0.91La0.09)(Zr0.65Ti0.35)O3 (PLZT) relaxor ferroelectric (RFE) films doped by Mn from 0 to 5 mol. % were deposited on LaNiO3/Si(100) substrates via a sol-gel method. The microstructure, dielectric properties, and energy-storage performance of PLZT thin films were investigated as a function of Mn content. X-ray …
Comparative study of piezoelectric response and energy-storage performance in normal ferroelectric, antiferroelectric and relaxor-ferroelectric ...
Among dielectric thin film capacitors, relaxor-ferroelectric (RFE) thin films have been extensively investigated due to their slim polarization hysteresis (P-E) loop, low remanent polarization (P ...
High‐energy storage density and excellent temperature stability in antiferroelectric/ferroelectric bilayer thin films …
The enhanced energy storage density of 28.2 J/cm 3 at 2410 kV/cm has been achieved in PbZrO 3 /PbZr 0.52 Ti 0.48 O 3 bilayer film at 20 C, which is higher than that of individual PbZr 0.52 Ti 0.48 O 3 film (15.6 …
Substantially improved energy storage capability of ferroelectric …
Herein, we report eco-friendly BiFeO 3-modified Bi 3.15 Nd 0.85 Ti 2.8 Zr 0.2 O 12 (BNTZ) free-lead ferroelectric thin films for high-temperature capacitor applications that …
Review on energy storage in lead‐free ferroelectric films
Amorphous-nanocrystalline lead titanate thin films for dielectric energy storage. Elizabeth K. Michael S. Trolier-McKinstry. Materials Science, Engineering. 2014. Many high permittivity crystalline dielectric thin films have a low breakdown strength, which is unfavorable for dielectric energy storage devices.
Thin films of relaxor ferroelectric/antiferroelectric heterolayered structure for energy storage …
We report the energy-storage performance and electric breakdown field of antiferroelectric PbZrO 3 (PZ) and relaxor ferroelectric Pb 0.9 La 0.1 (Zr 0.52 Ti 0.48)O 3 (PLZT) single films, as well as PLZT/PZ and PZ/PLZT heterolayered films grown on SrRuO 3 /Ca 2 Nb 3 O 10 –nanosheet/Si substrates using pulsed laser deposition. ...
High‐energy storage density and excellent temperature stability in antiferroelectric/ferroelectric bilayer thin films …
The enhanced energy storage density of 28.2 J/cm3 at 2410 kV/cm has been achieved in PbZrO3/PbZr0.52Ti0.48O3 bilayer film at 20 C, which is higher than that of individual PbZr0.52Ti0.48O3 film (15.6 J/cm3).
Strain Engineering of Energy Storage Performance in Relaxor Ferroelectric Thin Film …
The optimum energy storage properties, i.e. ultrahigh energy efficiency (95.9%), high energy-storage density (2.09 J cm⁻³) and good temperature stability (the fluctuations in energy-storage ...
Recent Development of Lead-free Relaxor Ferroelectric and Antiferroelectric Thin Films as Energy Storage …
In this work, the dielectric, ferroelectric, energy storage, electrocaloric (EC), and pyroelectric properties of (Pb0.92La0.08)(Zr0.55Ti0.45)O3 (PLZT) thin film (704 nm) are highlighted.
High energy-storage performance of BNT-BT-NN ferroelectric thin films prepared by RF magnetron sputtering …
Dielectric materials with high energy-storage density and efficiency have great potential applications in modern electric and electronic devices. In this work, a series of 0.9(0.94Bi 0.5 Na 0.5 TiO 3-0.06BaTiO 3)-0.1NaNbO 3 (BNT-BT-NN) ferroelectric thin films were deposited on LaNiO 3 (LNO) bottom electrodes by radio-frequency (RF) …
High‐energy storage density and excellent temperature stability in antiferroelectric/ferroelectric bilayer thin films …
application of the capacitors at higher temperature.8-12 For example, the energy storage density of (Pb 0.95Sr 0.05)ZrO 3 AFE thin films decreases from 14.5 J/cm3 to 7.5 J/cm3 when the temperature ...
Multifunctional Flexible Ferroelectric Thin Films with Large …
Flexible ferroelectric films with high polarization hold great promise for energy storage and electrocaloric (EC) refrigeration. Herein, we fabricate a lead-free Mn …
Enhancement of Energy-Storage Density in PZT/PZO-Based Multilayer Ferroelectric Thin Films …
A recoverable energy-storage density of 21.1 J/cm 3 was received in PZT/PZO multilayers due to its high electric breakdown strength. Our results demonstrate that a multilayer structure is an effective method for enhancing energy-storage capacitors. Keywords: PZT/PZO, multilayer thin films, electric breakdown field, energy-storage characteristics.
Review on energy storage in lead‐free ferroelectric films
Thus, a thorough understanding of the implementation, optimization and limitations of ferroelectric, relaxor-ferroelectric, and anti-ferroelectric thin films in high-energy …
Thin-film ferroelectric materials and their applications
Strain engineering can be used to control the properties of thin-film ferroelectric materials, which are promising for electronic, thermal, photovoltaic and transduction applications. This Review ...
High energy storage performance in lead-free BiFeO3-BaTiO3 ferroelectric thin film …
In this work, the 0.68BiFeO3-0.32BaTiO3 (BFBT) ferroelectric thin film was fabricated with high maximum polarization for energy storage applications. BFBT thin film with pure perovskite phase was deposited on Pt/Ti/SiO2/Si substrates at 600°C by Pulsed Laser Deposition (PLD) method. We measured the ferroelectric hysteresis, dielectric …
Optimized energy storage performance of SBT-based lead-free …
An improved high energy storage density of 55 J/cm 3 and an optimized high energy storage efficiency of 80.9% are achieved in the Mn-doped SBT-BT relaxor …
Comparative study of piezoelectric response and energy-storage performance in normal ferroelectric, antiferroelectric and relaxor-ferroelectric ...
The energy-storage performance and piezoelectric properties were determined for epitaxial antiferroelectric (AFE) PbZrO 3 (PZ), ferroelectric (FE) PbZr 0.52 Ti 0.48 O 3 (PZT), and relaxor ferroelectric (RFE) Pb 0.9 La 0.1 Zr 0.52 Ti 0.48 O 3 (PLZT) thin films that were deposited on to SrTiO 3 buffered Si substrates. ...
(IUCr) Energy storage properties influenced by relaxor ferroelectric properties dependent on the growth direction of epitaxial Bi2SiO5 thin films
Bi2SiO5 thin films on Nb-doped (111), (110) and (111) SrTiO3 substrates exhibit ferroelectric and energy storage characteristics influenced by their various crystallinities. 2. Experimental procedure A BSO ceramic target with stoichiometry Bi 2.2 Si 5 O 3 was fabricated from Bi 2 O 3 and SiO 2 powders using the solid-state reaction …
Strain Engineering of Energy Storage Performance in Relaxor Ferroelectric Thin Film …
The results show that the energy storage performance of the ternary film is better than that of the binary film due to the polymorphic nanodomains. In addition, as the film in-plane strain is modified from −2% to 2%, the energy density is improved by 80%, and the efficiency also increases from 52% to 77%.
Energy storage performance of (K, Na)NbO3 ferroelectric thin films with Mn …
High energy storage responses in all-oxide epitaxial relaxor ferroelectric thin films with the coexistence of relaxor and antiferroelectric-like behaviors Thin Solid Films, 636 ( 2017 ), pp. 188 - 192
High-Performance Ferroelectric–Dielectric Multilayered Thin Films for Energy Storage …
Thin film ferroelectric capacitors (TFFCs) with excellent energy storage have attracted increasing attention due to the electronic devices toward miniaturization and integration. BiFeO3 (BF)/Bi3 ...
Enhanced energy storage properties of epitaxial (Ba0.955Ca0.045)(Zr0.17Ti0.83)O3 ferroelectric thin films
Nanoscale piezoresponse force microscopy (PFM) images demonstrate switchable ferroelectric polarization of these thin films above ±9 V of dc voltage applied. Energy storage properties measured from ferroelectric loops revealed a high discharge curve energy density ~27.5 J/cm 3 at a maximum electric field of 2.77 MV/cm. Epitaxial …
High energy storage performance in lead-free BiFeO3-BaTiO3 ferroelectric thin film …
In this work, the 0.68BiFeO3-0.32BaTiO3 (BFBT) ferroelectric thin film was fabricated with high maximum polarization for energy storage applications. BFBT thin where E is the electric field, P is the polarization, P r is the remnant polarization, P m is the maximum field-induced polarization and U loss is the hysteresis loss. . According to the …
A review of ferroelectric materials for high power devices
Abstract. Compact autonomous ultrahigh power density energy storage and power generation devices that exploit the spontaneous polarization of ferroelectric materials are capable of producing hundreds of kilovolt voltages, multi-kiloampere currents, and megawatt power levels for brief interval of time.
Perovskite Oxide Ferroelectric Thin Films | Semantic Scholar
Perovskite oxide thin film materials are used in various fields of human life due to their excellent physical properties. The high performance thin films in turn provide more convenience to human life. How to prepare high‐performance thin films is the most difficult challenge for researchers. There are multiple factors that determine the …
Advancing Energy‐Storage Performance in Freestanding …
In the present work, the synergistic combination of mechanical bending and defect dipole engineering is demonstrated to significantly enhance the energy storage performance of …
Ferroelectric/paraelectric superlattices for energy …
The polarization response of antiferroelectrics to electric fields is such that the materials can store large energy densities, which makes them promising candidates for energy storage applications in …
Increasing energy storage capabilities of space-charge dominated ferroelectric thin films …
In our previous work (W. Zhang et al., Space-charge dominated epitaxial BaTiO 3 heterostructures, Acta Mater. 85 (2015) 207–215), it was demonstrated that a space charge dominated BaTiO 3 thin film can have much improved energy storage characteristics when compared with a regular insulating film of ferroelectric BaTiO 3..
Significant enhancement of energy-storage performance of (Pb0.91La0.09)(Zr0.65Ti0.35)O3 relaxor ferroelectric thin films …
A giant recoverable energy-storage density of 30.8 J/cm 3 was obtained in 1 mol. % Mn-doped films. Moreover, good temperature-dependent energy-storage stability was also observed in the films. These results indicated that Mn-doping was an efficient way to optimize the energy-storage behaviors of PLZT RFE films.