energy storage properties of antiferroelectric films
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[PDF] Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films …
The effect of residual stress on energy storage property was investigated for a series of PbZrO3 thin films on SrTiO3 and Si substrates. Compressive or tensile residual stress influences the critical electric field EA for the ferroelectric-to-antiferroelectric phase transition, thus for films with (110)/(101) orientation, energy density W of films on …
Energy storage properties of antiferroelectric 0.92NaNbO3-0.08SrZrO3 film …
Energy storage properties of antiferroelectric 0.92NaNbO 3-0.08SrZrO 3 film on (001)SrTiO 3 substrate Author links open overlay panel Kosuke Beppu a, Takayuki Shimasaki a, Ichiro Fujii b, Takahito Imai a, Hideaki Adachi c d, Takahiro Wada a
Robust Energy Storage Property of La-Doped PZT Films Within a …
In this work, the energy storage properties of PLZT films in a wide temperature range were investigated in detail. The films exhibit robust AFE properties …
Antiferroelectric oxide thin-films: Fundamentals, properties, and …
In conjunction with the necessary fundamental background of antiferroelectrics, we review recent progress on various antiferroelectric oxide thin …
Designing lead-free antiferroelectrics for energy storage
Antiferroelectric capacitors hold great promise for high-power energy storage. Here, through a first-principles-based computational approach, authors find high theoretical energy densities in rare ...
Ultrahigh-Energy Storage Properties of (PbCa)ZrO3 …
In recent years, antiferroelectric materials have been attracting considerable attention as energy storage capacitors due to their potential applications in …
High energy storage of PbZrO3 antiferroelectric thin films via …
This energy storage performance can be attributed to the synergistic effect of high electric breakdown strength of dense pyrochlore phase structure and high …
Improved energy storage properties through multilayer stacking …
The properties of the independent relaxor ferroelectric (RFE denoted as R) and antiferroelectric (AFE denoted as A) thin films were compared with their various …
Phase stability and energy storage properties of polycrystalline antiferroelectric BaTiO3-substituted NaNbO3 thin films …
DOI: 10.1016/j.jeurceramsoc.2023.11.071 Corpus ID: 265546572 Phase stability and energy storage properties of polycrystalline antiferroelectric BaTiO3-substituted NaNbO3 thin films xCaZrO3–(1−x)NaNbO3 thin films (x = 0 − 0.04) are epitaxially grown on (001)La ...
Energy storage properties of antiferroelectric 0.92NaNbO3-0.08SrZrO3 film …
The 0.98NaNbO3-0.02CaSnO3 film showed antiferroelectric double P-E response even at a high temperature of 180 C and had energy storage property of recoverable energy storage density (W r) of 1.7 J ...
Thickness-dependent dielectric and energy storage properties of …
Structural and electrical studies indicate that PLZT thin films show single phase composition and typical antiferroelectric (AFE) characteristics. By increasing the …
(PDF) Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy …
The energy storage properties of antiferroelectric (AFE) Pb0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field.
High energy-storage performance and discharge properties of (Pb0.98La0.02) (Zr0.45Sn0.55)0.995O3 antiferroelectric thick films …
The energy storage properties of antiferroelectric (AFE) Pb0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field.
Effects of PbO Content on the Dielectric Properties and Energy Storage Performance of (Pb0.97La0.02)(Zr0.97Ti0.03)O3 Antiferroelectric Thin Films ...
A 400-nm-thick (Pb 0.97 La 0.02 )(Zr 0.97 Ti 0.03 )O 3 (PLZT 2/97/3) antiferroelectric (AFE) thin films with different lead excess content (0%, 10%, and 20%) were successfully deposited on Pt(111)/TiO 2 /SiO 2 /Si substrates via a sol-gel process. The effects of lead excess content on the microstructure, dielectric properties, and …
Enhanced polarization switching and energy storage properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films …
Polarization switching and energy storage properties of highly (100) oriented antiferroelectric (AFE) (Pb,La)(Zr,Ti)O 3 thin films (≤250 nm) deposited via a sol-gel process with both LaNiO 3 and Pt top electrodes were investigated. By using LaNiO 3 top electrodes, the energy density as well as energy efficiency can be enhanced by 4.6 …
Energy-storage properties and electrocaloric effect of Pb (1-3x/2)LaxZr0.85Ti0.15O3 antiferroelectric thick films …
Antiferroelectric (AFE) thick (1 μm) films of Pb(1-3x/2)LaxZr0.85Ti0.15O3 (PLZT) with x = 0.08, 0.10, 0.12, and 0.14 were deposited on LaNiO3/Si (100) substrates by a sol-gel method. The dielectric properties, energy-storage performance, electrocaloric effect, and leakage current behavior were inves …
Effects of Ti-doping on energy storage properties and cycling stability of Pb0.925La0.05ZrO3 antiferroelectric thin films …
The superior energy storage properties of Pb 0.925 La 0.05 Zr 1-x Ti x O 3 antiferroelectric thin films in Zr rich were obtained. In Zr-rich region, the saturation polarization strengthens of PLZT with increasing Ti content due to change of ion-radius, and the switching field decreased which means the enhancement of ferroelectricity.
Effect of substrate and electrode on the crystalline structure and …
We report on the correlated investigation between crystal structures, field-induced phase transition, and energy storage properties of both polycrystalline and …
Effects of PbO insert layer on the microstructure and energy storage performance of (042)-preferred PLZT antiferroelectric thick films …
Two-micrometer-thick Pb 0.97 La 0.02 (Zr 0.98 Ti 0.02)O 3 (PLZT) antiferroelectric films, with the addition of different PbO insert layer, were successfully fabricated on LaNiO 3 /Si substrates through a sol–gel method, and their microstructure and the energy storage performance were investigated in detail. ...
Significantly improved energy storage properties and cycling stability in La-doped PbZrO3 antiferroelectric thin films …
The energy storage properties of antiferroelectric (AFE) Pb0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results … Expand
High energy storage performance in Ca-doped PbZrO3 antiferroelectric films …
The recoverable energy storage density and energy storage efficiency is 50.2 J/cm 3 and 83.1 % at 2800 kV/cm, which is 261 % and 44.8 % higher than those of the PbZrO 3 (PZ) films. These effects are attributed to the enhancement of stability of antiferroelectric phase, diffuseness in the field-induced phase transition and electric …
Antiferroelectric nano-heterostructures filler for improving energy storage performance of PVDF-based composite films …
[33], [34], [35] Furthermore, optimizing the structure and properties of the antiferroelectric materials through interface engineering has further proved that antiferroelectric materials can significantly enhance the …
Antiferroelectrics for Energy Storage Applications: a Review
Dielectric capacitors using antiferroelectric materials are capable of displaying higher energy densities as well as higher power/charge release densities by …
PbZrO3‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy Storage…
Energy storage capacitors occupy a large proportion in the pulse power equipment, and they play an important role nowadays. In recent years, anti‐ferroelectric materials have attracted increasing attention of researchers due to their high energy storage density. Compared with the lead‐free anti‐ferroelectric materials, PbZrO3 …
Energy storage properties of composite films with relaxor antiferroelectric behaviors …
While BBT layers only contribute to the relaxor ferroelectric properties, which makes the energy storage efficiency of the composite films significantly improve comparing with the pure PZ films. Based on the above discussion, the PZ layer mainly contributes antiferroelectric property at low electric field and the BBT layers mainly …
Energy storage and dielectric properties in PbZrO3/PbZrTiO3 antiferroelectric…
Due to their double hysteresis loops induced by phase transitions under electric fields, antiferroelectric (AFE) capacitors exhibit high energy storage densities and efficiency. Among AFE bulk materials for energy storage applications, PbZrO 3 (PZ)-based ceramics have been extensively studied due to their high EBDS and low remnant …
Phase stability and energy storage properties of polycrystalline …
Microstructural analysis reveals a change in nucleation mechanism, and X-ray diffraction and Raman spectroscopy confirmed a composition-driven …
Thickness-dependent dielectric and energy storage properties of (Pb0.96La0.04)(Zr0.98Ti0.02)O3 antiferroelectric thin films …
A series of dense and uniform (Pb0.96La0.04)(Zr0.98Ti0.02)O3 (PLZT) thin films with different thicknesses have been deposited on (La2/3Sr1/3)MnO3/SrTiO3 substrates by a modified chemical solution deposition method. Structural and electrical studies indicate that PLZT thin films show single phase composition and typical …
Tailoring switching field of phase transition for enhancing energy-storage density of PLZST antiferroelectric thick films …
DOI: 10.1016/j.jallcom.2020.158559 Corpus ID: 233073815 Tailoring switching field of phase transition for enhancing energy-storage density of PLZST antiferroelectric thick films The polarization response of antiferroelectrics to electric fields is such that the materials ...